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| MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR ARRAY SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER SA01, SA02, SA04, SA07 OUTLINE DRAWING +0.5 15 0 Dimensions in mm 4 MAX 1 2 1 23 3 1 4 x 3 = 12 1 5 4 0.5 1 0.5 5 2 3 1 2 3 4 5 MAIN THYRISTOR: ANODE MAIN THYRISTOR: GATE MAIN AND AUX. THYRISTOR: CATHODE AUX. THYRISTOR: GATE AUX. THYRISTOR: ANODE SA SERIES APPLICATION Automatic strobe flasher FAMILY CONSTITUTION Guide No. (ASA100) 25 32 25 Type SA01 SA02 SA04 Commutating characteristics CM=700F, ITM=200A, CC=2.2F CM=1000F, ITM=230A, CC=2.5F CM=700F, ITM=200A, CC=1.4F Aux thyristor High sensitive IGT =250A High holding current IH 25mA High holding current IH 25mA High sensitive IGT 250A Application Compact strobe Middle class strobe SA07 Built-in strobe MAXIMUM RATINGS (Ta= -20 ~ +60C, unless otherwise noted) Symbol VDRM V1 VDSM V1 VRRM - IFGM Topr Tstg Parameter Repetitive peak off-state voltage Non-repetitive peak off-state voltage Repetitive peak reverse voltage Pulse current ability Peak gate forward current Operating ambient temperature Storage temperature 0.5 0.3 0.5 1.0 480 600 480 600 400 See electrical characteristics 1.0 1.0 0.5 0.3 SA01 Main Aux Main SA02 Aux 400 480 600 450 600 Main SA04 Aux Main SA07 Aux Unit V V V A A C C -20 ~ +60 -40 ~ +125 V1. Connect 1k resistor between gate to cathode. 3 MIN 4 8 MAX 10 MAX Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR ARRAY SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER ELECTRICAL CHARACTERISTICS Symbol IDRM IRRM IGT VGT IH Parameter Repetitive peak off-state current V1 Repetitive peak reverse current Gate trigger current Gate trigger voltage Holding current V2 (Ta=25C, unless otherwise noted) SA01 Main 100 100 30 1.5 -- Aux 20 20 0.25 1.0 1.0 Main 100 100 30 1.5 -- SA02 Aux 100 100 30 1.5 25 Main 100 100 50 2.0 -- SA04 Aux 100 100 30 1.5 25 Main 100 100 80 1.5 -- SA07 Aux 20 20 0.25 1.0 1.0 Unit A A mA V mA V1. Connect 1k resistor between gate to cathode. V2. Minimum value SR1FM L 22k trg VCM CM + - trg 0 CC i1 1 SAOX 5 2 4 10n 470 470 i1 0 tw IP 47n i5 1k iG iG 0 iG t 10 10k 47n t 3 t Fig. 1 Test circuit i5 0 t Fig. 2 The voltage and current waveforms SA120 1 1 MAIN THYRISTOR 2 2 3 4 5 5 AUX THYRISTOR 4 3 Fig. 3 Pin position and Equivalent circuit Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR ARRAY SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER COMMUTATION CHARACTERISTICS IN STROBE APPLICATION SA series commutates at arbitrary conducting duration tw under following condition. (See Fig. 1, 2) Please confer following sheets in case that CM or ITM is different from mentioned value. (See shown under) COMMUTATING CHARACTERISTICS Symbol VCM CM ITM L CC Parameter Main capacitor charging voltage Main capacitor Peak on-state current Anode reactor Commutating capacitor (Ta=25C, Single pulse operation) SA01 700 200 2.2 SA02 SA04 350 1000 230 25 2.5 1.4 700 200 SA07 Unit V F A H F NOTICE Please consider counterplans against induced noise across common impedance. (between common cathode 3 and the ground point of trigger cicuit for the auxiliary thyristor) PERFORMANCE CURVES GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE MAIN THYRISTOR SA01,07 AUX THYRISTOR GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 0.6 0.5 0.4 0.3 0.2 0.1 0 -0.1 MAIN THYRISTOR -0.2 -0.3 -0.4 -20 -10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (C) AUX THYRISTOR TYPICAL EXAMPLE 100 (%) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) SA02,04 AUX THYRISTOR 101 -20 -10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (C) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 100 (%) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR ARRAY SA01, SA02, SA04, SA07 THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 104 7 5 3 2 GATE TRIGGER CURRENT VS. GATE TRIGGER PULSE WIDTH 100 (%) 100 (%) TYPICAL EXAMPLE SA01,07 AUX THYRISTOR HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) SA01,07 AUX THYRISTOR 103 7 MAIN 5 THYRISTOR 3 2 102 7 5 SA02,04 AUX THYRISTOR 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER PULSE WIDTH (s) SA02,04 AUX THYRISTOR 101 -20 -10 0 10 20 30 40 50 60 70 80 JUNCTION TEMPERATURE (C) COMMUTATING CHARACTERISTICS (SA01,SA02) 1000 1400 COMMUTATING CHARACTERISTICS (SA04) VCM = 350V L = 25H Ta = 25C SEE FIG.1 MAIN CAPACITOR (F) 600 MAIN CAPACITOR (F) 800 1200 1000 CC = 1.7F CC = 1.8F CC = 1.9F CC = 2.0F CC = 2.1F 400 CC = 2.2F CC = 2.3F 800 CC = 1.8F CC = 2.0F CC = 2.2F CC = 2.4F CC = 2.6F 200 600 400 160 0 120 VCM = 350V Ta = 25C L = 25H SEE FIG.1 140 160 180 200 220 CC = 2.8F 260 180 200 220 240 PEAK ON-STATE CURRENT (A) PEAK ON-STATE CURRENT (A) 1000 100 (%) COMMUTATING CHARACTERISTICS (SA07) COMMUTATING CAPACITOR VS. AMBIENT TEMPERATURE 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 10 20 30 40 50 60 70 80 90 100 AMBIENT TEMPERATURE (C) TYPICAL EXAMPLE 600 400 200 0 120 140 160 180 200 220 PEAK ON-STATE CURRENT (A) COMMUTATING CAPACITOR (Ta = tC) COMMUTATING CAPACITOR (Ta = 25C) MAIN CAPACITOR (F) 800 CC = 0.8F CC = 0.9F CC = 1.0F CC = 1.1F CC = 1.2F CC = 1.3F CC = 1.4F CC = 1.5F Feb.1999 |
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